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datasheet 1 rev. 1.3, 2006-12-22 smart low side power switch power hitfet bts 142d product summary drain source voltage v ds 42 v on-state resistance r ds ( on ) 28 m nominal load current i d ( nom ) 4.6 a clamping energy e a s 3.5 j features logic level input input protection (esd) thermal shutdown with auto restart ? green product (rohs compliant) overload protection short circuit protection overvoltage protection current limitation analog driving possible p / pg-to252-3-11 application all kinds of resistive, inductive and capacitive loads in switching or linear applications c compatible power switch for 12 v dc applications replaces electromechanical relays and discrete circuits general description n channel vertical power fet in smart sipmos technology. fully protected by embedded protection functions. gate-driving unit esd overload protection over- temperature protection short circuit protection overvoltage- protection current limitation m v bb in source drain hitfet pin 1 pin 2 and 4 (tab) pin 3 com p lete p roduct s p ectrum and additional information htt p ://www.infineon.com/hitfet
datasheet 2 rev. 1.3, 2006-12-22 smart low side power switch power hitfet bts 142d maximum ratings at t j = 25c, unless otherwise specified parameter symbol value unit drain source voltage v ds 42 v supply voltage for full short circuit protection v bb ( sc ) 42 continuous input voltage 1) v in -0.2 2) ... +10 continuous input current 2) -0.2v v in 10v v in < -0.2v or v in > 10v i in self limited | i in | 2 ma operating temperature t j -40 ...+150 c storage temperature t st g -55 ... +150 power dissipation 5) t c = 85 c 6cm 2 cooling area , t a = 85 c p tot 59 1.1 w unclamped single pulse inductive energy 2) e a s 3.5 j load dump protection v loaddump 2)3) = v a + v s v in = 0 and 10 v, t d = 400 ms, r i = 2 , r l = 3 , v a = 13.5 v v ld 67.5 v v esd 2 kv thermal resistance junction - case: r thjc 1.1 k/w smd: junction - ambient @ min. footprint @ 6 cm 2 cooling area 4) r thja 115 55 1 for input voltages beyond these limits i in has to be limited. 2 not subject to production test, specified by design 3 v loaddump is setup without the dut connected to the generator per iso 7637-1 and din 40839 4 device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70m thick) copper area for drain connection. pcb mounted vertical without blown air. 5 not subject to production test, calculated by r thja and r ds(on) e lectro s tatic d ischarge voltage 2) (human body model) according to jedec norm eia/jesd22-a114-b, section 4
datasheet 3 rev. 1.3, 2006-12-22 smart low side power switch power hitfet bts 142d electrical characteristics parameter symbol values unit at t j = 25c, unless otherwise specified min. typ. max. characteristics drain source clamp voltage t j = - 40 ...+ 150 c, i d = 10 ma v ds(az) 42 - 55 v off-state drain current t j = -40...+85 c, v ds = 32 v, v in = 0 v t j = 150 c i dss - - 1.5 10 8 20 a input threshold voltage i d = 2.4 ma, t j = 25 c i d = 2.4 ma, t j = 150 c v in(th) 1.3 0.8 1.7 - 2.2 - v on state input current i in ( on ) - 10 30 a on-state resistance v in = 5 v, i d = 4.6 a, t j = 25 c v in = 5 v, i d = 4.6 a, t j = 150 c r ds(on) - - 27 54 34 68 m on-state resistance v in = 10 v, i d = 4.6 a, t j = 25 c v in = 10 v, i d = 4.6 a, t j = 150 c r ds(on) - - 23 46 28 56 nominal load current 5) t j < 150c, v in = 10 v, t a = 85 c, smd 1) i d(nom) 4.6 5.5 - a nominal load current 5) v in = 10 v, v ds = 0.5 v, t c = 85 c, t j < 150c i d(iso) 12.6 15.3 - current limit (active if v ds >2.5 v) 2) v in = 10 v, v ds = 12 v, t m = 200 s i d(lim) 30 45 55 1 @ 6 cm 2 cooling area 2 device switched on into existing short circuit (see diagram determination of i d(lim) ). if the device is in on conditi a nd a short circuit occurs, these values might be exceeded for max. 50 s. 5 not subject to production test, calculated by r thja and r ds(on)
datasheet 4 rev. 1.3, 2006-12-22 smart low side power switch power hitfet bts 142d electrical characteristics parameter symbol values unit at t j = 25c, unless otherwise specified min. typ. max. dynamic characteristics turn-on time v in to 90% i d : r l = 4.7 , v in = 0 to 10 v, v bb = 12 v t on - 60 120 s turn-off time v in to 10% i d : r l = 4.7 , v in = 10 to 0 v, v bb = 12 v t off - 60 120 slew rate on 70 to 50% v bb : r l = 4.7 , v in = 0 to 10 v, v bb = 12 v -dv ds /dt on - 0.3 1.5 v/s slew rate off 50 to 70% v bb : r l = 4.7 , v in = 10 to 0 v, v bb = 12 v dv ds /dt off - 0.3 1.5 protection functions 1) thermal overload trip temperature t j t 150 175 - c thermal hysteresis 2) t j t - 10 - k input current protection mode t j = 150 c i in(prot) - 180 400 a unclamped single pulse inductive energy 2) i d = 4.6 a, t j = 25 c, v bb = 12 v e as 3.5 - - j inverse diode inverse diode forward voltage i f = 51 a, t m = 250 s, v in = 0 v, t p = 300 s v sd - 1.0 1.5 v 1 integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as "outside" normal operating range. protection functions are not designed for continuous repetitive operation . 2 not subject to production test, specified by design
datasheet 5 rev. 1.3, 2006-12-22 smart low side power switch power hitfet bts 142d block diagram inductive and overvoltage output clamp terms hitfet in d v in i d v ds 1 i in s v bb r l 2 3 hitfet v z d s short circuit behaviour input circuit (esd protection) gate drive source/ ground input v in i in i d s t j
datasheet 6 rev. 1.3, 2006-12-22 smart low side power switch power hitfet bts 142d 1 maximum allowable power dissipation p tot = f(t c ) resp. p tot = f(t a ) @ r thja =55 k/w -50 -25 0 25 50 75 100 c 150 t a ;t c 0 0.5 1 1.5 2 2.5 3 3.5 4 w 5 p tot smd @ 6cm2 rthjc = 1.1 k/w 2 on-state resistance r on = f(t j ); i d =12.6a; v in =10v -50 -25 0 25 50 75 100 125 c 175 t j 0 10 20 30 40 m 60 r ds(on) typ. max. 3 on-state resistance r on = f(t j ); i d = 12.6a; v in =5v -50 -25 0 25 50 75 100 125 c 175 t j 0 10 20 30 40 50 m 70 r ds(on) typ. max. 4 typ. input threshold voltage v in(th) = f(t j ) ; i d = 1.2 ma; v ds = 12v -50 -25 0 25 50 75 100 c 150 t j 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v 2 v gs(th)
datasheet 7 rev. 1.3, 2006-12-22 smart low side power switch power hitfet bts 142d 5 typ. transfer characteristics i d =f(v in ); v ds =12v; t jstart =25c 1 2 3 4 5 6 7 8 v 10 v in 0 5 10 15 20 25 30 35 40 a 50 i d 6 typ. short circuit current i d(lim) = f(t j ); v ds =12v parameter: v in -50 -25 0 25 50 75 100 125 c 175 t j 0 5 10 15 20 25 30 35 40 45 50 a 60 i d 5v vin=10v 7 typ. output characteristics i d =f(v ds ); t jstart =25c parameter: v in 0 1 2 3 4 v 6 v ds 0 5 10 15 20 25 30 35 40 45 50 a 60 i d vin=3v 4v 5v 6v 7v 10v 8 off-state drain current i dss = f( t j ) -50 -25 0 25 50 75 100 125 c 175 t j 0 2.5 5 7.5 10 12.5 15 17.5 20 a 25 i dss typ. max.
datasheet 8 rev. 1.3, 2006-12-22 smart low side power switch power hitfet bts 142d 9 typ. overload current i d(lim) = f( t ) , v bb =12 v, no heatsink parameter: t jstart 0 0.5 1 1.5 2 2.5 3 3.5 4 ms 5 t 0 10 20 30 40 50 a 70 i d(lim) -40c 25c 85c 150c 10 typ. transient thermal impedance z thja =f( t p ) @ 6 cm 2 cooling area parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3 s t p -3 10 -2 10 -1 10 0 10 1 10 2 10 k/w z thja single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 11 determination of i d(lim) i d(lim) = f( t ); t m = 200s parameter: t jstart 0 0.1 0.2 0.3 0.4 ms 0.6 t 0 10 20 30 40 50 a 70 i d(lim) -40c 25c 85c 150c
datasheet 9 rev. 1.3, 2006-12-22 smart low side power switch power hitfet bts 142d package outlines 1 package outlines figure 1 pg-to252-3-11 (plastic dual small outline package) (rohs-compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb- free finish on leads and suitable for pb-free soldering according to ipc/jedec j-std-020). please specify the package needed (e.g. green package) when placing an order 5.4 0.1 -0.05 6.5 +0.15 a 0.5 9.98 6.22 -0.2 1 0.1 0.15 0.8 0.15 max. 0.1 per side 0.75 2.28 4.57 +0.08 gpt09277 -0.04 0.5 2.3 -0.10 +0.05 b 0.51 min. +0.08 -0.04 0.5 0...0.15 b a 0.25 m 0.1 all metal surfaces tin plated, except area of cut. 3x (5) (4.24) -0.01 +0.20 0.9 b you can find all of our packages, sorts of packing and others in our infineon internet page ?products?: http://www.infineon.com/products . dimensions in mm
datasheet 10 rev. 1.3, 2006-12-22 smart low side power switch power hitfet bts 142d revision history 2 revision history version date changes rev. 1.3 2006-12-22 released automotive green and robust version (bts) package parameter (humidity and climatic) removed in maximum ratings rev. 1.2 2006-12-11 aec icon added rohs icon added green product (rohs-compliant) added to the feature list package information updated to green green explanation added rev. 1.1 2006-08-08 released non automotive green version (its) rev. 1.0 2004-03-05 released production version
edition 2006-12-22 published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2007. all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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